ahkab.constants
Constants useful for building equations and expressions describing
semiconductor physics
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class
Material[source]
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Eg(T=300)[source]
Energy gap of silicon at temperature T
Parameters:
- T : float, optional
- The temperature at which the thermal voltage is to be evaluated.
If not specified, it defaults to
constants.Tref.
Returns:
- Eg : float
- The energy gap, expressed in electron-volt (eV).
-
ni(T=300)[source]
Intrinsic semiconductor carrier concentration at temperature T
Parameters:
- T : float, optional
- The temperature at which the thermal voltage is to be evaluated.
If not specified, it defaults to
constants.Tref.
Returns:
- ni : float
- The intrinsic carrier concentration.
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T = 300
Simulation temperature in Kelvin degrees.
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Tref = 300
Reference temperature in Kelvin degrees.
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Vth(T=300)[source]
The thermal voltage: \(kT/q\).
Parameters:
- T : float, optional
- The temperature at which the thermal voltage is to be evaluated.
If not specified, it defaults to
constants.Tref.
Returns:
- vth : float
- The thermal voltage, \(kT/q\).
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e = 1.60217646e-19
The electron charge \(e\).
-
k = 1.3806503e-23
The Boltzmann constant
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si = <ahkab.constants.silicon instance>
Silicon class instantiated.
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class
silicon[source]
Silicon class
Access this class as constants.si.
Attributes
esi: permittivity of silicon.
eox: permittivity of silicon dioxide.
